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Non-linear Microwave Surface Impedance of Epitaxial HTS Thin Films in Low DC Magnetic Fields

机译:外延HTs薄膜的非线性微波表面阻抗   低直流磁场

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摘要

We have carried out non-linear microwave (8 GHz) surface impedancemeasurements of three YBaCuO thin films in dc magnetic fields $H_{dc}$(parallel to c axis) up to 12 mT using a coplanar resonator technique. In zerodc field the three films, deposited by the same method, show a spread oflow-power residual surface resistance, $R_{res}$ and penetration depth,$\lambda$ (T=15 K) within a factor of 1.9. However, they exhibit dramaticallydifferent microwave field, $H_{rf}$ dependences of the surface resistance,$R_s$, but universal $X_s(H_{rf})$ dependence. Application of a dc field wasfound to affect not only absolute values of $R_s$ and $X_s$, but the functionaldependences $R_s(H_{rf})$ and $X_s(H_{rf})$ as well. For some of the samplesthe dc field was found to decrease $R_s$ below its zero-field low-power value.
机译:我们已经使用共面谐振器技术在高达12 mT的直流磁场$ H_ {dc} $(平行于c轴)中对三个YBaCuO薄膜进行了非线性微波(8 GHz)表面阻抗测量。在零直流场中,用相同方法沉积的三层薄膜在1.9的因子内显示出低功率残留表面电阻$ R_ {res} $和穿透深度$ \ lambda $(T = 15 K)的分布。然而,它们表现出显着不同的微波场,表面电阻的$ H_ {rf} $依赖性,$ R_s $,但是普遍的$ X_s(H_ {rf})$依赖性。发现直流场的应用不仅影响$ R_s $和$ X_s $的绝对值,而且还影响功能相关性$ R_s(H_ {rf})$和$ X_s(H_ {rf})$。对于某些样本,发现直流场将$ R_s $降低到零场低功率值以下。

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